52913 tkimtc-00002932/60612 tkim/n0211pe tkim tc-00002658 no. a0342-1/7 http://onsemi.com semiconductor components industries, llc, 2013 may, 2013 mch3375 p-channel power mosfet ? 30v, ? 1.6a, 295m , single mcph3 features ? on-resistance r ds (on)1=227m (typ.) ? 4v drive ? halogen free compliance speci cations absolute maximum ratings at ta=25c parameter symbol conditions ratings unit drain to source voltage v dss --30 v gate to source voltage v gss 20 v drain current (dc) i d --1.6 a drain current (pulse) i dp pw 10 s, duty cycle 1% --6.4 a allowable power dissipation p d when mounted on ceramic substrate (900mm 2 0.8mm) 0.8 w channel temperature tch 150 c storage temperature tstg --55 to +150 c this product is designed to ?esd immunity < 200v * ?, so please take care when handling. * machine model package dimensions unit : mm (typ) 7019a-003 ordering number : ENA0342b ordering & package information device package shipping note mch3375-tl-h mcph3 sc-70, sot-323 3,000 pcs./reel pb-free and halogen free packing type: tl marking electrical connection 1 2 3 tl qg lot no. lot no. 1 : gate 2 : source 3 : drain mcph3 0.25 0.25 0.07 2.1 1.6 2.0 0.65 0.3 0.85 0.15 12 3 0 to 0.02 mch3375-tl-h stresses exceeding maximum ratings may damage the device. maximum ratings are stress ratings only. functional operation above t he recommended operating conditions is not implied. extended exposure to stresses above the recommended operating conditions may affect device reliabili ty.
mch3375 no. a0342-2/7 electrical characteristics at ta=25c parameter symbol conditions ratings unit min typ max drain to source breakdown voltage v (br)dss i d = -- 1ma, v gs =0v --30 v zero-gate voltage drain current i dss v ds = -- 30v, v gs =0v -- 1 a gate to source leakage current i gss v gs =16v, v ds =0v 10 a cutoff voltage v gs (off) v ds = -- 10v, i d = -- 1ma --1.2 --2.6 v forward transfer admittance | yfs | v ds = -- 10v, i d = -- 0.8a 1.3 s static drain to source on-state resistance r ds (on)1 i d = -- 0.8a, v gs = -- 10v 227 295 m r ds (on)2 i d = -- 0.4a, v gs = -- 4.5v 374 523 m r ds (on)3 i d = -- 0.4a, v gs = -- 4v 435 609 m input capacitance ciss v ds =--10v, f=1mhz 82 pf output capacitance coss 22 pf reverse transfer capacitance crss 16 pf turn-on delay time t d (on) see speci ed test circuit. 4.0 ns rise time t r 3.3 ns turn-off delay time t d (off) 12 ns fall time t f 5.4 ns total gate charge qg v ds =--15v, v gs =--10v, i d =--1.6a 2.2 nc gate to source charge qgs 0.36 nc gate to drain ?miller? charge qgd 0.49 nc diode forward voltage v sd i s =--1.6a, v gs =0v --0.9 --1.5 v switching time test circuit pw=10 s d.c. 1% p. g 50 g s d i d = --0.8a r l =18.75 v dd = --15v v out mch3375 v in 0v --10v v in
mch3375 no. a0342-3/7 i d -- v ds i d -- v gs drain current, i d -- a drain to source voltage, v ds -- v drain current, i d -- a gate to source voltage, v gs -- v 0 --1.6 --1.2 --1.4 --0.4 --0.8 --1.0 --0.2 --0.6 --0.4 --0.2 --0.6 0 --2.0 --1.6 --1.4 --1.8 --0.8 --1.2 --1.0 0 --0.2 --0.4 --0.6 --0.8 --1.0 --0.1 --0.3 --0.5 --0.7 --0.9 it16626 0 --1.0 --0.5 --1.5 --4.0 --2.5 --2.0 --3.5 --3.0 -- 2 5 c it16627 --6.0v ta=75 c v ds = --10v --10.0v 25 c v gs = --2.5v --8.0v --3.0v --3.5v --4.0v --4.5v ta=25 c i s -- v sd | y fs | -- i d forward transfer admittance, | y fs | -- s drain current, i d -- a source current, i s -- a diode forward voltage, v sd -- v sw time -- i d ciss, coss, crss -- v ds switching time, sw time -- ns ciss, coss, crss -- pf drain current, i d -- a drain to source voltage, v ds -- v r ds (on) -- ta r ds (on) -- v gs static drain to source on-state resistance, r ds (on) -- m static drain to source on-state resistance, r ds (on) -- m gate to source voltage, v gs -- v ambient temperature, ta -- c i s -- v sd it16630 it16631 0 --0.2 --0.4 --0.6 --0.8 --1.0 --1.2 0.1 1.0 10 7 7 5 3 2 2 5 3 --0.1 --1.0 23 57 --10 7 --0.01 23 57 23 5 ta= --25 c v ds = --10v --0.001 --0.01 2 v gs =0v --0.01 --0.1 --1.0 23 57 23 57 --10 23 57 v dd = --15v v gs = --10v t d (on) t d (off) t f it16632 0 --5 --10 3 7 5 7 5 3 2 100 1000 10 2 --30 --15 --20 --25 ciss coss crss it16633 10 100 1.0 2 3 7 5 7 5 2 3 ta=75 c 25 c - -25 c f=1mhz t r 75 c 25 c 3 --0.1 7 5 2 3 7 5 2 3 7 7 5 --1.0 --10 2 3 5 0 --2 --6 --10 --16 --14 --4 --8 --12 200 100 400 300 500 1000 700 800 900 600 0 200 600 400 800 1000 100 500 300 700 900 0 it16637 it16638 i d = --0.4a --0.8a ta=25 c --60 --40 --20 0 20 40 60 80 100 120 140 160 v gs = --4.0v, i d = --0.4a v gs = --10.0v, i d = --0.8a v gs = --4.5v, i d = --0.4a
mch3375 no. a0342-4/7 v gs -- qg total gate charge, qg -- nc gate to source voltage, v gs -- v a s o drain to source voltage, v ds -- v drain current, i d -- a 0 3.0 1.5 0.5 1.0 2.5 2.0 it16634 0 -- 1 -- 2 -- 3 -- 4 -- 5 -- 6 -- 7 -- 8 -- 9 --10 v ds = --15v i d = --1.6a 2 3 5 7 2 --0.1 3 5 7 --1.0 --0.01 23 57 2357 --0.1 --1.0 23 57 --10 --100 it16639 10ms 100ms operation in this area is limited by r ds (on). dc operation i dp = --6.4a (pw 10 s) 1ms 2 3 5 7 --10 100 s i d = --1.6a ta=25 c single pulse when mounted on ceramic substrate (900mm 2 0.8mm) ambient temperature, ta -- c p d -- ta allowable power dissipation, p d -- w it16640 0 0 20 40 60 80 100 140 120 1.0 0.8 0.4 0.2 0.6 160 when mounted on ceramic substrate (900mm 2 0.8mm)
mch3375 no. a0342-5/7 taping speci cation mch3375-tl-h
mch3375 no. a0342-6/7 outline drawing land pattern example mch3375-tl-h mass (g) unit 0.007 * for reference mm unit: mm 0.65 0.65 0.4 2.1 0.6
mch3375 ps no. a0342-7/7 note on usage : since the mch3375 is a mosfet product, please avoid using this device in the vicinity of highly charged objects. on semiconductor and the on logo are registered trademarks of semiconductor components industries, llc (scillc). scillc owns th e rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. a listing of scillc?s product/patent covera ge may be accessed at www.onsemi.com/site/pdf/patent-marking.pdf. scillc reserves the right to make changes without further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does scillc ass ume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation sp ecial, consequential or incidental damages. ?typical? parameters which may be provided in scillc data sheets and/or specifications can and do vary in different ap plications and actual performance may vary over time. all operating parameters, including ?typicals? must be validated for each customer application by customer?s technical experts. scillc does not convey any license under its patent rights nor the rights of others. scillc products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life , or for any other application in which the failure of the scillc product could create a situation where personal injury or death may occur. should buyer purchas e or use scillc products for any such unintended or unauthorized application, buyer shall indemnify and hold scillc and its officers, employees, subsidiarie s, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that scillc was negligent regarding the d esign or manufacture of the part. scillc is an equal opportunity/affirmative action employer. this literature is subject to all applicable copyright laws a nd is not for resale in any manner.
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